191 citations · 452 across the 15 of their papers we have counts for
15 papers
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
R. S. R. Gajjela, A. L. Hendriks, A. Alzeidan +3
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the…
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
D. Tjeertes, T. J. F. Verstijnen, A. Gonzalo +10
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-…
Probing the local electronic structure of isovalent Bi atoms in InP
C. M. Krammel, A. R. da Cruz, M. E. Flatté +7
Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pat…
Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
P. V. Petrov, I. A. Kokurin, Yu. L. Ivanov +5
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarizatio…
Spatially resolved electronic structure of an isovalent nitrogen center in GaAs
R. C. Plantenga, V. R. Kortan, T. Kaizu +4
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration d…
Observation of the symmetry of core states of a single Fe impurity in GaAs
J. Bocquel, V. R. Kortan, R. P. Campion +3
We report the direct observation of two mid-gap core d-states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their h…