activity
20032026
most citedSpatial structure of an individual Mn acceptor in GaAs

191 citations · 290 across the 13 of their papers we have counts for

collaborators

14 papers

physics.plasm-ph2026

Plasma double layer development during high power EUV exposure

Manis Chaudhuri, Pavel Krainov, Dmitry Astakhov +2

The development of electrostatic plasma double layer (DL) at the boundary of Extreme Ultra Violet (EUV) exposed and un-exposed region in the bulk volume has been confirmed by 3DPIC…

physics.plasm-ph2025

Transient population dynamics of nanoparticles during pulsed EUV exposures

M. Chaudhuri, L. C. J. Heijmans, A. M. Yakunin +3

The transient population dynamics of charged (postive or negative) and neutral nanoparticles have been investigated in a pulsed Extreme Ultra-Violet (EUV) exposure environment with…

physics.plasm-ph2024

Electromagnetic particle-in-cell modeling of an electron cyclotron resonance plasma discharge in hydrogen

D. Eremin, Yu. Sharova, L. Heijmans +4

A low pressure discharge sustained in molecular hydrogen with help of the electron cyclotron resonance heating at a frequency of 2.45 GHz is simulated using a fully electromagnetic…

physics.plasm-ph2023

Particle charging during pulsed EUV exposures with afterglow effect

M. Chaudhuri, L. C. J. Heijmans, M. van de Kerkhof +3

The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is f…

physics.plasm-ph2021

Electron drag force in EUV induced pulsed hydrogen plasmas

M. Chaudhuri, A. Yakunin, M. van de Kerkhof +1

Extreme ultraviolet (EUV) induced pulsed plasma is unique due to its transient characteristics: the plasma switches between non-thermal state (when EUV power is ON at the beginning…

physics.plasm-ph2021

EUV-induced Hydrogen Plasma : Pulsed Mode Operation and Confinement in Scanner

Mark van de Kerkhof, Andrei M. Yakunin, Dmitry Astakhov +3

In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. Thi…