Chern number spins of Mn acceptor magnets in GaAs

Abstract

We determine the effective total spin $J$ of local moments formed from acceptor states bound to Mn ions in GaAs by evaluating their magnetic Chern numbers. We find that when individual Mn atoms are close to the sample surface, the total spin changes from $J=1$ to $J=2$, due to quenching of the acceptor orbital moment. For Mn pairs in bulk, the total $J$ depends on the pair orientation in the GaAs lattice and on the separation between the Mn atoms. We point out that Berry curvature variation as a function of local moment orientation can profoundly influence the quantum spin dynamics of these magnetic entities.

4 pages, 3 figures

References in corpus (7)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
• Spatial structure of an individual Mn acceptor in GaAs
• Multiband tight-binding model of local magnetism in GaMnAs
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
• Magnetic interactions of substitutional Mn pairs in GaAs

Cited by in corpus (4)

• Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
• Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
• Observation of the symmetry of core states of a single Fe impurity in GaAs
• Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies