Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
arXiv:cond-mat/0507012 · doi:10.1103/PhysRevB.72.161315
Abstract
The spin orientation of a magnetic dopant in a zincblende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the dopant's core spin. For a Mn dopant in GaAs the local density of states at a site 8 angstrom away from the dopant can change by as much by 90% when the Mn spin orientation changes. These changes in the local density of states could be probed by scanning tunneling microscopy to infer the magnetic dopant's spin orientation.
5 pages, 4 figures
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- Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
- Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
- Influence of surface-related strain and electric field on acceptor wave functions in Zincblende semiconductors
- Chern number spins of Mn acceptor magnets in GaAs
- Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
- Bound hole states in a ferromagnetic (Ga,Mn)As environment
- Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
- Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach
- Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
- Observation of the symmetry of core states of a single Fe impurity in GaAs
- Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
- Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies