Influence of surface-related strain and electric field on acceptor wave functions in Zincblende semiconductors

Abstract

The spatial distribution of the local density of states (LDOS) at Mn acceptors near the (110) surface of p-doped InAs is investigated by Scanning Tunneling Microscopy (STM). The shapes of the acceptor contrasts for different dopant depths under the surface are analyzed. Acceptors located within the first ten subsurface layers of the semiconductor show a lower symmetry than expected from theoretical predictions of the bulk acceptor wave function. They exhibit a (001) mirror asymmetry. The degree of asymmetry depends on the acceptor atoms' depths. The measured contrasts for acceptors buried below the 10th subsurface layer closely match the theoretically derived shape. Two effects are able to explain the symmetry reduction: the strain field of the surface relaxation and the tip-induced electric field.

8 pages, 4 figures

References in corpus (5)

• Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
• Spatial structure of an individual Mn acceptor in GaAs
• Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs

Cited by in corpus (5)

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• Observation of the symmetry of core states of a single Fe impurity in GaAs