Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants

Abstract

Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. Whilst dielectric mismatch between the vacuum and the silicon at the interface results in an image charge which enhances the binding energy of sub-surface acceptors, quantum confinement is shown to reduce the binding energy. Using scanning tunneling spectroscopy we measure resonant transport through the localized states of individual acceptors. Thermal broadening of the conductance peaks provides a direct measure for the absolute energy scale. Our data unambiguously demonstrates that these two independent effects compete with the result that the ionization energy is less than 5 meV lower than the bulk value for acceptors less than a Bohr radius from the interface.

References in corpus (4)

• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Single donor ionization energies in a nanoscale CMOS channel
• On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs
• Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

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• Interface effects on acceptor qubits in silicon and germanium
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Novel characterisation of dopant-based qubits