27 citations · 59 across the 4 of their papers we have counts for
4 papers
Landau Level Single-Electron Pumping
E. Pyurbeeva, M. D. Blumenthal, J. A. Mol +5
We present the first detailed study of the effect of a strong magnetic field on single-electron pumping in a device utilising a finger-gate split-gate configuration. In the quantum…
Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants
J. A. Mol, J. Salfi, J. A. Miwa +2
Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantu…
Balanced ternary addition using a gated silicon nanowire
J. A. Mol, J. van der Heijden, J. Verduijn +3
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electro…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…