Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Abstract

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

13 pages, 3 figures, 1 table, accepted for Applied Physics Letters

References in corpus (5)

• Spin transport and quasi 2D architectures for donor-based quantum computing
• Single donor ionization energies in a nanoscale CMOS channel
• Single-atom doping for quantum device development in diamond and silicon
• Compact silicon double and triple dots realized with only two gates
• Thermionic Emission as a tool to study transport in undoped nFinFETs

Cited by in corpus (5)

• Silicon Quantum Electronics
• Donor spins in silicon for quantum technologies
• Ion Implantation for Deterministic Single Atom Devices
• Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
• Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots