61 citations · 450 across the 18 of their papers we have counts for
18 papers
Bulk and sub-surface donor bound excitons in silicon under electric fields
Rajib Rahman, Jan Verduijn, Yu Wang +4
The electronic structure of the three-particle donor bound exciton (DX) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approx…
Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
Samuel J. Hile, Matthew G. House, Eldad Peretz +5
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing us…
Radio-frequency dispersive detection of donor atoms in a field-effect transistor
J. Verduijn, M. Vinet, S. Rogge
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not strai…
Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system
R. R. Agundez, J. Verduijn, S. Rogge +1
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field…
Non-local coupling of two donor-bound electrons
J. Verduijn, R. R. Agundez, M. Blaauboer +1
We report the results of an experiment investigating coherence and correlation effects in a system of coupled donors. Two donors are strongly coupled to two leads in a parallel con…
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Enrico Prati, Marco De Michielis, Matteo Belli +14
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…