Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
arXiv:1005.1237 · doi:10.1103/PhysRevB.82.075317
Abstract
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.
7 pages, 6 figures
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- Interface effects on acceptor qubits in silicon and germanium
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- Donors in Ge as Qubits: Establishing Physical Attributes