Control of the ionization state of 3 single donor atoms in silicon

Abstract

By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes.

arXiv comment18 pages, 5 figures, submitted to Physical Review B

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• Spatially resolved resonant tunneling on single atoms in silicon
• Dopant-controlled single-electron pumping through a metallic island