Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO${}_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

References in corpus (7)

• Valley Polarization in Si(100) at Zero Magnetic Field
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• A simple and controlled single electron transistor based on doping modulation in silicon nanowires
• Spin filling of valley-orbit states in a silicon quantum dot
• Background charges and quantum effects in quantum dots transport spectroscopy
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• Transport in a periodically driven tilted lattice via the extended reservoir approach: Stability criterion for recovering the continuum limit
• Novel characterisation of dopant-based qubits
• Inelastic Cotunneling Resonances in the Coulomb-Blockade Transport in Donor-Atom Transistors