Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO${}_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

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Cited by in corpus (26)

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• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• A two-atom electron pump
• Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots
• Gate-sensing coherent charge oscillations in a silicon field-effect transistor
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• Charge Pumping Through a Single Donor Atom
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• An Exchange-Coupled Donor Molecule in Silicon
• Electric-field tuning of the valley splitting in silicon corner dots
• Spatially resolved resonant tunneling on single atoms in silicon
• Pauli spin blockade in CMOS double quantum dot devices
• Valley blockade and multielectron spin-valley Kondo effect in silicon
• Readout of relaxation rates by nonadiabatic pumping spectroscopy
• Control of the ionization state of 3 single donor atoms in silicon
• Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
• Dynamics of a single-atom electron pump
• Spin excitations in an all-organic double quantum dot molecule
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
• Non-local coupling of two donor-bound electrons
• Transport in a periodically driven tilted lattice via the extended reservoir approach: Stability criterion for recovering the continuum limit
• Strongly correlated charge transport in silicon MOSFET quantum dots
• Novel characterisation of dopant-based qubits
• Inelastic Cotunneling Resonances in the Coulomb-Blockade Transport in Donor-Atom Transistors