92 citations · 592 across the 23 of their papers we have counts for
23 papers
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Ian Thorvaldson, Dean Poulos, Christian M. Moehle +15
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit…
Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation
David Mikhail, Benoit Voisin, Dominique Didier St Medar +3
We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topolo…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Novel characterisation of dopant-based qubits
B. Voisin, J. Salfi, R. Rahman +1
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
F. N. Krauth, S. K. Gorman, Y. He +9
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic cont…
Spin-photon coupling for atomic qubit devices in silicon
Edyta N. Osika, Sacha Kocsis, Yu-Ling Hsueh +6
Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manip…
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
Scanned single-electron probe inside a silicon electronic device
Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson +3
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable…
Certification of spin-based quantum simulators
Abolfazl Bayat, Benoit Voisin, Gilles Buchs +3
Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator…
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
J. Salfi, B. Voisin, A. Tankasala +6
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the…
Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
Muhammad Usman, Juanita Bocquel, Joe Salfi +6
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…
Electrical control of g-factors in a few-hole silicon nanowire MOSFET
B. Voisin, R. Maurand, S. Barraud +5
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hype…
Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel +5
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunc…
Spatially resolved resonant tunneling on single atoms in silicon
B. Voisin, J. Salfi, J. Bocquel +2
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the…
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi +5
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the centr…
A hybrid metal/semiconductor electron pump for quantum metrology
X. Jehl, B. Voisin, T. Charron +8
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of…
A two-atom electron pump
B. Roche, R. -P. Riwar, B. Voisin +6
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two…
Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
Benoit Roche, Eva Dupont-Ferrier, Benoit Voisin +6
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous repo…
Coupling and coherent electrical control of two dopants in a silicon nanowire
E. Dupont-Ferrier, B. Roche, B. Voisin +5
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recentl…
A tunable, dual mode field-effect or single electron transistor
Benoît Roche, Benoit Voisin, Xavier Jehl +5
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor techn…