Electrical control of g-factors in a few-hole silicon nanowire MOSFET

Abstract

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz.

arXiv comment15 pages, 3 figures

References in corpus (31)

• Quantum Computation with Quantum Dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A single-atom electron spin qubit in silicon
• Spin-orbit qubit in a semiconductor nanowire
• Storing quantum information for 30 seconds in a nanoelectronic device
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Coherent single electron spin control in a slanting Zeeman field
• Single donor ionization energies in a nanoscale CMOS channel
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors
• Fast spin-orbit qubit in an indium antimonide nanowire
• Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
• Electrical control over single hole spins in nanowire quantum dots
• A valley-spin qubit in a carbon nanotube
• Electrically controlling single spin qubits in a continuous microwave field
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Spin states of the first four holes in a silicon nanowire quantum dot
• SiGe quantum dots for fast hole spin Rabi oscillations
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures
• Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
• Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
• Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot
• Single hole transistor in a p-Si/SiGe quantum well
• Enhanced hyperfine-induced spin dephasing in a magnetic-field gradient

Cited by in corpus (55)

• Semiconductor Spin Qubits
• A CMOS silicon spin qubit
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• Recent advances in hole-spin qubits
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Charge-insensitive single-atom spin-orbit qubit in silicon
• Silicon quantum dot devices with a self-aligned second gate layer
• Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots
• Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• Quantum Computing with Acceptor Spins in Silicon
• Spin blockade as a probe of Zeeman interactions in hole quantum dots
• Spin-orbit dynamics of single acceptor atoms in silicon
• SOI technology for quantum information processing
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• All-electrical control of hole singlet-triplet spin qubits at low leakage points
• Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
• Strong hole-photon coupling in planar Ge for probing charge degree and strongly-correlated states
• Charge-noise induced dephasing in silicon hole-spin qubits
• Si CMOS Platform for Quantum Information Processing
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Enhanced orbital magnetic field effects in Ge hole nanowires
• Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors
• Gunn Effect in Silicon Nanowires: Charge Transport under High Electric Field
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• Pauli spin blockade in CMOS double quantum dot devices
• Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient
• Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
• Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
• Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
• Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
• Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction
• Strongly correlated charge transport in silicon MOSFET quantum dots
• Optimal operation of hole spin qubits
• Depletion-mode Quantum Dots in Intrinsic Silicon
• Room temperature magneto-optic effect in silicon light-emitting diodes
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot