Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient

Abstract

We study electrical and thermoelectrical properties for a double quantum dot system. We consider the cases of both single-level and multilevel quantum dots whatever the way they are coupled, either in a series or in a parallel arrangement. The calculations are performed by using the nonequilibrium Green function theory. In the case of a single-level double quantum dot, the problem is exactly solvable whereas for a multilevel double quantum dot, an analytical solution is obtained in the limit of energy-independent hopping integrals. { We present a detailed discussion about} the dependences of electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient on the gate voltages applied to the dots, allowing us to derive the charge stability diagram. The findings are in agreement with the experimental observations notably with the occurrence of successive sign changes of the Seebeck coefficient when varying the gate voltages. We interpret the results in terms of the bonding and antibonding states produced by the level anticrossing effect which occurs in the presence of a finite interdot coupling. We show that at equilibrium the boundary lines between the domains with different dot occupancies in the charge stability diagram, take place when the bonding and antibonding state levels are aligned with the chemical potentials in the leads. Finally the total dot occupancy is found to be considerably reduced in the case in parallel compared with the case in series, { whenever} the level energies in each dot are equal. We interpret this dip as a direct manifestation of the interference effects occurring in the presence of the two electronic transmission paths provided by each dot.

arXiv comment18 pages, 13 figures

References in corpus (62)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Time-dependent transport in interacting and non-interacting mesoscopic systems
• Electron transport through double quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Silicon Quantum Electronics
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Manipulation of a single charge in a double quantum dot
• Fidelity benchmarks for two-qubit gates in silicon
• Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
• Time-dependent resonant tunneling via two discrete states
• Three-Terminal Energy Harvester with Coupled Quantum Dots
• Large enhancement of thermoelectric effects in a double quantum dot system due to interference and Coulomb correlation phenomena
• Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
• Tunable Fano effect in parallel-coupled double quantum dot system
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Cotunneling thermopower of single electron transistors
• Transport through a double quantum dot in the sequential- and co- tunneling regimes
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Coherent and incoherent pumping of electrons in double quantum dots
• Electrically Protected Valley-Orbit Qubits in Silicon
• Correlation induced resonances in transport through coupled quantum dots
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• A silicon quantum-dot-coupled nuclear spin qubit
• Changes in the Magnetization of a Double Quantum Dot
• Mesoscopic admittance of a double quantum dot
• Thermoelectric performance of a driven double quantum dot
• Radio-frequency capacitive gate-based sensing
• Unified description of correlations in double quantum dots
• Transport Statistics of Interacting Double Dot Systems: Coherent and Non-Markovian Effects
• Quantum Transport through Nanostructures with Orbital Degeneracies
• Double quantum dot as a minimal thermoelectric generator
• Charge Sensing of an Artificial H2+ Molecule
• Tunable dynamical channel blockade in double-dot Aharonov-Bohm interferometers
• Influence of branch points in the complex plane on the transmission through double quantum dots
• Thermoelectrics with Coulomb coupled quantum dots
• Quantum Thermodynamics with Degenerate Eigenstate Coherences
• Spin-dependent thermoelectric effects in a strongly correlated double quantum dot
• Powerful Coulomb-drag thermoelectric engine
• Mixed, charge and heat noises in thermoelectric nanosystems
• Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene
• Thermal Gating of Charge Currents with Coulomb Coupled Quantum Dots
• Non-Monotonic Thermoelectric Currents and Energy Harvesting in Interacting Double Quantum-Dots
• Electric-field tuning of the valley splitting in silicon corner dots
• Nonsymmetrized noise in a quantum dot: Interpretation in terms of energy transfer and coherent superposition of scattering paths
• Emission Noise in an Interacting Quantum Dot: Role of Inelastic Scattering and Asymmetric Coupling to the Reservoirs
• Multi-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime
• Steady state conductance in a double quantum dot array: The nonequilibrium equation-of-motion Green function approach
• Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
• Towards hybrid circuit quantum electrodynamics with quantum dots
• Quantum interference in transport through almost symmetric double quantum dots
• Thermal rectification in a double quantum dots system with polaron effect
• The influence of Coulomb correlations on nonequilibrium quantum transport in quadruple quantum-dot structure
• Quantum entanglement and transport in non-equilibrium interacting double-dot setup: The curious role of degeneracy
• Tunable RKKY interaction in a double quantum dot nanoelectromechanical device
• Charge susceptibility and conductances of a double quantum dot
• Functional renormalization group study of parallel double quantum dots: Effects of asymmetric dot-lead couplings
• Valley blockade in a silicon double quantum dot

Cited by in corpus (5)

• Thermoelectric properties of a double quantum dot out of equilibrium in Kondo and intermediate valence regimes
• Dynamical charge susceptibility in nonequilibrium double quantum dots
• Role of asymmetry in thermoelectric properties of a double quantum dot out of equilibrium
• Finite-frequency noise, Fano factor, $\Delta T$-noise and cross-correlations in double quantum dots
• Single-electron emission from degenerate quantum levels