Radio-frequency capacitive gate-based sensing

Abstract

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $\mu$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $\mu$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.

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• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Single-shot readout of multiple donor electron spins with a gate-based sensor
• Non-galvanic calibration and operation of a quantum dot thermometer
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• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
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• Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
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• Probing the Quantum Capacitance of Rydberg Transitions of Surface Electrons on Liquid Helium via Microwave Frequency Modulation
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• Four-state discrimination for a pair of spin qubits via gate reflectometry