Excess dissipation in a single-electron box: The Sisyphus resistance

Abstract

We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

5 pages, 3 figures

References in corpus (8)

• Decoherence in Josephson Qubits from Dielectric Loss
• Mach-Zehnder Interferometry in a Strongly Driven Superconducting Qubit
• Landau-Zener interferometry with superconducting qubits
• Coherence times of dressed states of a superconducting qubit under extreme driving
• Observation of quantum capacitance in the Cooper-pair transistor
• Sisyphus cooling and amplification by a superconducting qubit
• Fast quantum limited read-out of a superconducting qubit using a slow oscillator
• Charge relaxation resistance in the Coulomb blockade problem

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