Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor

Abstract

Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_{\text{B}}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.

References in corpus (15)

• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• A Crossbar Network for Silicon Quantum Dot Qubits
• The Josephson heat interferometer
• Rectification of electronic heat current by a hybrid thermal diode
• A high-sensitivity gate-based charge sensor in silicon
• Heat Coulomb Blockade of One Ballistic Channel
• Thermal Conductance of a Single-Electron Transistor
• Mesoscopic admittance of a double quantum dot
• Radio-frequency capacitive gate-based sensing
• Primary thermometry triad at 6 mK in mesoscopic circuits
• Thermal rectification with interacting electronic channels: Exploiting degeneracy, quantum superpositions and interference
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Traceable Coulomb Blockade Thermometry
• Nongalvanic thermometry for ultracold two-dimensional electron domains
• Thermometry and memcapacitance with qubit-resonator system

Cited by in corpus (16)

• Probing quantum devices with radio-frequency reflectometry
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Thermal transistor and thermometer based on Coulomb-coupled conductors
• CMOS on-chip thermometry at deep cryogenic temperatures
• Non-galvanic calibration and operation of a quantum dot thermometer
• Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• A quantum dot-based frequency multiplier
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Thermometry Based on a Superconducting Qubit
• Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation
• Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
• An elongated quantum dot as a distributed charge sensor
• Real-time milli-Kelvin thermometry in a semiconductor qubit architecture
• Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics
• A non-local cryogenic thermometer based on Coulomb-coupled systems