Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
arXiv:2310.11383 · doi:10.1016/j.chip.2024.100097
Abstract
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 m the power budget raises to 150 W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems.
References in corpus (22)
- A CMOS silicon spin qubit
- Computing with spin qubits at the surface code error threshold
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Universal control of a six-qubit quantum processor in silicon
- Silicon quantum processor unit cell operation above one Kelvin
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Universal quantum logic in hot silicon qubits
- CMOS-based cryogenic control of silicon quantum circuits
- Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
- A hole spin qubit in a fin field-effect transistor above 4 kelvin
- A high-sensitivity gate-based charge sensor in silicon
- Quantum error correction with silicon spin qubits
- The impact of classical control electronics on qubit fidelity
- Probing quantum devices with radio-frequency reflectometry
- Resonant tunnelling features in the transport spectroscopy of quantum dots
- A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
- Primary thermometry triad at 6 mK in mesoscopic circuits
- GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing
- Thermal budget of superconducting digital circuits at sub-kelvin temperatures
- Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
- Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
- CMOS on-chip thermometry at deep cryogenic temperatures