75 citations · 167 across the 9 of their papers we have counts for
9 papers
Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud +3
Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic d…
Electric-field tuning of the valley splitting in silicon corner dots
David J. Ibberson, Léo Bourdet, José C. Abadillo-Uriel +5
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. Fir…
A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor
Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed +2
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation f…
Radio-frequency capacitive gate-based sensing
Imtiaz Ahmed, James A. Haigh, Simon Schaal +8
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensi…
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim +3
We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum w…
Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects
Zubair Al Azim, Nadim Chowdhury, Iftikhar Ahmad Niaz +3
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained b…
Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam +3
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Me…
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed +3
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold V…
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed +3
In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consisten…