activity
20122018
most citedRadio-frequency capacitive gate-based sensing

75 citations · 167 across the 9 of their papers we have counts for

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Showing 2012Show all

4 papers · 1 filter

physics.gen-ph2012

Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects

Zubair Al Azim, Nadim Chowdhury, Iftikhar Ahmad Niaz +3

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained b…

physics.gen-ph2012

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam +3

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Me…

cond-mat.mtrl-sci2012

A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET

Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed +3

In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold V…

cond-mat.mtrl-sci2012★ 2 cited

In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current

Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed +3

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consisten…