Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics
arXiv:2307.16725 · doi:10.22331/q-2024-03-21-1294
Abstract
Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.
References in corpus (22)
- Driven quantum transport on the nanoscale
- Qubit-photon interactions in a cavity: Measurement induced dephasing and number splitting
- Black-box superconducting circuit quantization
- Strong Coupling of a Single Electron in Silicon to a Microwave Photon
- Quantum trajectory approach to circuit QED: Quantum jumps and the Zeno effect
- Nonadiabatic Landau-Zener-Stückelberg-Majorana transitions, dynamics, and interference
- A high-sensitivity gate-based charge sensor in silicon
- Photon Shot Noise Dephasing in the Strong-Dispersive Limit of Circuit QED
- Floquet States in Open Quantum Systems
- Measurement-induced qubit state mixing in circuit QED from up-converted dephasing noise
- Input-output theory for spin-photon coupling in Si double quantum dots
- Mesoscopic admittance of a double quantum dot
- A self-consistent quantum master equation approach to molecular transport
- Exploring the limits of the self consistent Born approximation for inelastic electronic transport
- A silicon-based single-electron interferometer coupled to a fermionic sea
- Beyond Marcus theory and the Landauer-Buttiker approach in molecular junctions. II. A self-consistent Born approach
- Dispersive readout of adiabatic phases
- Small-signal equivalent circuit for double quantum dots at low-frequencies
- Probing two driven double quantum dots strongly coupled to a cavity
- Non-galvanic calibration and operation of a quantum dot thermometer
- A quantum dot-based frequency multiplier
- Dynamical charge susceptibility in nonequilibrium double quantum dots