Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics
arXiv:2307.16725 · doi:10.22331/q-2024-03-21-1294
Abstract
Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.
References in corpus (60)
- Quantum Computation with Quantum Dots
- Cavity quantum electrodynamics for superconducting electrical circuits: an architecture for quantum computation
- Landau-Zener-Stuckelberg interferometry
- Driven quantum transport on the nanoscale
- A short introduction to the Lindblad Master Equation
- A CMOS silicon spin qubit
- The Flux Qubit Revisited to Enhance Coherence and Reproducibility
- Computing with spin qubits at the surface code error threshold
- Photon-assisted transport in semiconductor nanostructures
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Robustness of adiabatic quantum computation
- Qubit-photon interactions in a cavity: Measurement induced dephasing and number splitting
- Universal control of a six-qubit quantum processor in silicon
- Strong spin-photon coupling in silicon
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Black-box superconducting circuit quantization
- Strong Coupling of a Single Electron in Silicon to a Microwave Photon
- CMOS-based cryogenic control of silicon quantum circuits
- Quantum trajectory approach to circuit QED: Quantum jumps and the Zeno effect
- Floquet-Markov description of the parametrically driven, dissipative harmonic quantum oscillator
- Nonadiabatic Landau-Zener-Stückelberg-Majorana transitions, dynamics, and interference
- A high-sensitivity gate-based charge sensor in silicon
- Density Operators for Fermions
- Charge and spin state readout of a double quantum dot coupled to a resonator
- Photon Shot Noise Dephasing in the Strong-Dispersive Limit of Circuit QED
- Geometry and response of Lindbladians
- Floquet States in Open Quantum Systems
- Measurement-induced qubit state mixing in circuit QED from up-converted dephasing noise
- Probing quantum devices with radio-frequency reflectometry
- Input-output theory for spin-photon coupling in Si double quantum dots
- Time Dependent Markovian Quantum Master Equation
- Beyond Marcus theory and the Landauer-Büttiker approach in molecular junctions: A unified framework
- Quantum and Tunnelling Capacitance in Charge and Spin Qubits
- A simple derivation of the Lindblad equation
- Mesoscopic admittance of a double quantum dot
- Markovian Quantum Master Equation beyond Adiabatic Regime
- A self-consistent quantum master equation approach to molecular transport
- Excess dissipation in a single-electron box: The Sisyphus resistance
- Sub-Ohmic to super-Ohmic crossover behavior in nonequilibrium quantum systems with electron-phonon interactions
- Floquet spectroscopy of a strongly driven quantum dot charge qubit with a microwave resonator
- In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling
- Quantum Computation Protocol for Dressed Spins in a Global Field
- Dispersive readout: Universal theory beyond the rotating-wave approximation
- Exploring the limits of the self consistent Born approximation for inelastic electronic transport
- Implementation of the SMART protocol for global qubit control in silicon
- Spin-orbit dynamics of single acceptor atoms in silicon
- Nonequilibrium steady states in the Floquet-Lindblad systems: van Vleck's high-frequency expansion approach
- Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
- A silicon-based single-electron interferometer coupled to a fermionic sea
- Impedance of the single electron transistor at radio-frequencies
- Beyond Marcus theory and the Landauer-Buttiker approach in molecular junctions. II. A self-consistent Born approach
- Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout
- The Floquet Engineer's Handbook
- Dispersive readout of adiabatic phases
- Small-signal equivalent circuit for double quantum dots at low-frequencies
- Probing two driven double quantum dots strongly coupled to a cavity
- Topology detection in cavity QED
- Non-galvanic calibration and operation of a quantum dot thermometer
- A quantum dot-based frequency multiplier
- Dynamical charge susceptibility in nonequilibrium double quantum dots