Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Abstract

We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

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Cited by in corpus (9)

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• Charge detection in an array of CMOS quantum dots
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Hole spin qubits in thin curved quantum wells
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning
• Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems