5 papers
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis
Stefano Bigoni, Marco L. V. Tagliaferri, Dario Tamascelli +5
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to…
Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
N. W. Hendrickx, M. L. V. Tagliaferri, M. Kouwenhoven +6
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over jun…
Impact of valley phase and splitting on readout of silicon spin qubits
M. L. V. Tagliaferri, P. L. Bavdaz, W. Huang +3
We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting a…
Spin lifetime and charge noise in hot silicon quantum dot qubits
L. Petit, J. M. Boter, H. G. J. Eenink +10
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. W…
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…