activity
20152020
most citedGate-controlled quantum dots and superconductivity in planar germanium

138 citations · 358 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2020★ 1 cited

Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis

Stefano Bigoni, Marco L. V. Tagliaferri, Dario Tamascelli +5

We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to…

cond-mat.supr-con2018★ 37 cited

Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium

N. W. Hendrickx, M. L. V. Tagliaferri, M. Kouwenhoven +6

We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over jun…

cond-mat.mes-hall2018★ 21 cited

Impact of valley phase and splitting on readout of silicon spin qubits

M. L. V. Tagliaferri, P. L. Bavdaz, W. Huang +3

We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting a…

cond-mat.mes-hall2018★ 127 cited

Spin lifetime and charge noise in hot silicon quantum dot qubits

L. Petit, J. M. Boter, H. G. J. Eenink +10

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. W…

cond-mat.mes-hall2018★ 138 cited

Gate-controlled quantum dots and superconductivity in planar germanium

N. W. Hendrickx, D. P. Franke, A. Sammak +9

Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the d…

cond-mat.mes-hall2016★ 19 cited

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4

We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…

cond-mat.mes-hall2015★ 15 cited

Valley blockade and multielectron spin-valley Kondo effect in silicon

A. Crippa, M. L. V. Tagliaferri, D. Rotta +6

We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunn…