Compact silicon double and triple dots realized with only two gates

Abstract

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.

3 pages, 4 figures

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Cited by in corpus (4)

• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
• Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire