activity
20052023
most citedFew Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

52 citations · 291 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2023★ 8 cited

Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound

E. Longo, A. Markou, C. Felser +6

Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing s…

cond-mat.mtrl-sci2021★ 45 cited

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Emanuele Longo, Matteo Belli, Mario Alia +8

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards t…

cond-mat.mes-hall2019★ 4 cited

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO interface

M. Belli, M. Fanciulli, R. de Sousa

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy.…

cond-mat.mes-hall2012★ 27 cited

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

G. Mazzeo, E. Prati, M. Belli +5

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ioniza…

cond-mat.mes-hall2012★ 52 cited

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Enrico Prati, Marco De Michielis, Matteo Belli +14

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…

quant-ph2010★ 32 cited

Adiabatic Charge Control in a Single Donor Atom Transistor

Enrico Prati, Matteo Belli, Simone Cocco +2

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot i…