Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

Abstract

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/Si{O}_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel.

4 Figures (color)

References in corpus (4)

• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Microwave Assisted Transport in a Single Donor Silicon Quantum Dot
• Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
• Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device

Cited by in corpus (2)

• Coherent Transport of Quantum States by Deep Reinforcement Learning
• Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon