Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

Abstract

We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and ${}^3$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas.

arXiv comment3.3 pages, 3 figures

References in corpus (3)

• Quantum Computation with Quantum Dots
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Indirect Interaction of Solid-State Qubits via Two-Dimensional Electron Gas

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• Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device
• Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis