Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Abstract

Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.

8 Figures

References in corpus (5)

• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
• Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
• Microwave band on-chip coil technique for single electron spin resonance in a quantum dot

Cited by in corpus (4)

• Is all-electrical silicon quantum computing feasible in the long term?
• Microwave Assisted Transport in a Single Donor Silicon Quantum Dot
• Cryogenic instrumentation for fast current measurement in a silicon single electron transistor
• Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device