Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET

Abstract

We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. From the dc current excited into the MOSFET by the microwave field we determine the corresponding equivalent drain voltage. The RTS experimental data are in agreement with the prediction obtained with the model, making use of the voltage data measured with the independent dc microwave induced current. We conclude that when operating a MOSFET under microwave irradiation, as in single spin resonance detection, one has to pay attention into the effects related to microwave irradiation dependent RTS changes.

3 pages, 4 figures

References in corpus (2)

• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

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