Microwave Assisted Transport in a Single Donor Silicon Quantum Dot

Abstract

Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the $D_0$ energy of the donor. Such microwave assisted transport at zero bias enhances the resolution in the spectroscopy of the energy levels of the donor.

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References in corpus (7)

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• Driven coherent oscillations of a single electron spin in a quantum dot
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Single-parameter non-adiabatic quantized charge pumping
• Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
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• Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
• Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device
• Spin-valley resolved photon-assisted tunneling in carbon nanotube double quantum dots
• GHz photon-activated hopping between localized states in a silicon quantum dot
• Exploration of the memory effect on the photon-assisted tunneling via a single quantum dot: A generalized Floquet theoretical approach