254 citations · 752 across the 14 of their papers we have counts for
14 papers
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
A. C. Betz, R. Wacquez, M. Vinet +5
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate elec…
Valley blockade and multielectron spin-valley Kondo effect in silicon
A. Crippa, M. L. V. Tagliaferri, D. Rotta +6
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunn…
Discrete Charging in Polysilicon Gates of Single Electron Transistors
Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam +4
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade…
Charge Pumping Through a Single Donor Atom
G. C. Tettamanzi, R. Wacquez, S. Rogge
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated…
A hybrid metal/semiconductor electron pump for quantum metrology
X. Jehl, B. Voisin, T. Charron +8
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of…
A two-atom electron pump
B. Roche, R. -P. Riwar, B. Voisin +6
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two…