Charge Pumping Through a Single Donor Atom

Abstract

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.

14 pages, 10 figures, few changes in the text and in figure 8, New J. Phys. (2014) at press

References in corpus (4)

• Single-parameter non-adiabatic quantized charge pumping
• Single-parameter quantized charge pumping in high magnetic fields
• A cryogenic amplifier for fast real-time detection of single-electron tunneling
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

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• Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
• Waiting times of entangled electrons in normal-superconducting junctions
• Coulomb-blockade effect in nonlinear mesoscopic capacitors
• Gigahertz Single-Electron Pumping Mediated by Parasitic States
• High-temperature fusion of a multi-electron leviton
• Single-particle emission at finite temperatures
• Dopant-controlled single-electron pumping through a metallic island
• Dynamics of a single-atom electron pump
• Single-electron $G^{(2)}$ function at nonzero temperatures
• Heat and charge transport in interacting nanoconductors driven by time-modulated temperatures
• Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
• Single-Hole Pump in Germanium