Non-adiabatic pumping of single electrons affected by magnetic fields

Abstract

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.

This article has been submitted to Physica E

References in corpus (4)

• Single-parameter non-adiabatic quantized charge pumping
• Robust single-parameter quantized charge pumping
• Single-parameter quantized charge pumping in high magnetic fields
• Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field

Cited by in corpus (8)

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• A self-referenced single-electron quantized-current source
• Charge Pumping Through a Single Donor Atom
• Synchronized single electron emission from dynamical quantum dots
• Interaction effect on adiabatic pump of charge and spin in quantum dot
• A quantized current source with mesoscopic feedback
• Quantum dot state initialization by control of tunneling rates
• Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation