Robust single-parameter quantized charge pumping

Abstract

This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable source of quantized current.

Submitted to Appl. Phys. Lett

References in corpus (2)

• Single-parameter non-adiabatic quantized charge pumping
• Hybrid single-electron transistor as a source of quantized electric current

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