Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile

Abstract

We consider a hybrid single-electron transistor (SET) constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (S-I-N-I-S), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

12 pages, 10 figures

References in corpus (4)

• Robust single-parameter quantized charge pumping
• Non-adiabadic charge pumping in a hybrid SET transistor
• Nanoampere pumping of Cooper pairs
• Leakage Current of a Superconductor-Normal Metal Tunnel Junction Connected to a High-Temperature Environment

Cited by in corpus (4)

• Recent Developments in Quantum-Circuit Refrigeration
• Clocked single-spin source based on a spin-split superconductor
• Suppression of back-tunnelling events in hybrid single-electron turnstiles by source-drain bias modulation
• Mesoscopic electron transport and atomic gases, a review of Frank W. J. Hekking's scientific work