Andreev tunneling in charge pumping with SINIS turnstiles

Abstract

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile's charging energy. Increasing the charging energy effectively suppresses the Andreev current.

6 pages, 4 figures, 1 table Published version with various improvements to figures and text

References in corpus (4)

• Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor
• Non-adiabadic charge pumping in a hybrid SET transistor
• Are pinholes the cause of excess current in superconducting tunnel junctions? A study of Andreev current in highly resistive junctions
• Environmentally Activated Tunneling Events in a Hybrid Single-Electron Box

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• Active quasiparticle suppression in a non-equilibrium superconductor
• Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile
• Heat dissipation mechanisms in hybrid superconductor-semiconductor devices revealed by Joule spectroscopy
• Applications of Superconductor-Normal Metal Interfaces
• Suppression of back-tunnelling events in hybrid single-electron turnstiles by source-drain bias modulation