Accurate high speed single-electron quantum dot preparation

Abstract

Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.

12 pages, 3 figures

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• Single-shot read-out of an individual electron spin in a quantum dot
• An On-Demand Coherent Single Electron Source
• Single-parameter non-adiabatic quantized charge pumping
• Production and detection of entangled electron-hole pairs in a degenerate electron gas
• Parallel pumping of electrons
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• Single-parameter quantized charge pumping in high magnetic fields
• Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field
• Parallel quantized charge pumping
• Experimental investigation of hybrid single-electron turnstiles with high charging energy

Cited by in corpus (35)

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• Ultrafast Emission and Detection of a Single-Electron Gaussian Wave Packet: A Theoretical Study
• Single-electron shuttle based on a silicon quantum dot
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• Modeling of a tunable-barrier non-adiabatic electron pump beyond the decay cascade model
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• Full Counting Statistics of a Non-adiabatic Electron Pump
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• Coherent superconducting quantum pump
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• Quantum turnstile operation of single-molecule magnets
• Carrier-carrier inelastic scattering events for spatially separated electrons: magnetic asymmetry and turnstile electron transfer
• Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation
• Etching process of narrow wire and application to tunable-barrier electron pump