Quantized current of a hybrid single-electron transistor with superconducting leads and a normal-metal island

Abstract

We discuss the operation of the superconductor - insulator - normal-metal - insulator - superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.

10 pages, 9 figures; Text edited, one new figure added, references updated

References in corpus (6)

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• Heat Transistor: Demonstration of Gate-Controlled Electron Refrigeration
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• Andreev tunneling in charge pumping with SINIS turnstiles
• Leakage Current of a Superconductor-Normal Metal Tunnel Junction Connected to a High-Temperature Environment
• Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile
• Ultra cold atoms and Bose-Einstein condensation for quantum metrology
• Interplay of the inverse proximity effect and magnetic field in out-of-equilibrium single-electron devices
• Clocked single-spin source based on a spin-split superconductor
• Zero-average bias bidirectional single-electron current generation in a hybrid turnstile
• Experimental determination of the elastic cotunneling rate in a hybrid single-electron box
• Open quantum dynamics of Josephson charge pumps
• Photonic Negative Differential Thermal Conductance Enabled by NIS Junctions