29 citations · 103 across the 5 of their papers we have counts for
5 papers
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
M. J. Calderon, J. Verduijn, G. P. Lansbergen +3
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the c…
Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen +6
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the ch…
Flux noise in ion-implanted nanoSQUIDs
Giuseppe C. Tettamanzi, Christopher I. Pakes, Simon K. H. Lam +1
Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diame…
Superconducting transition in Nb nanowires fabricated using focused ion beam
G. C. Tettamanzi, C. I. Pakes, A. Potenza +3
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined i…