254 citations · 752 across the 14 of their papers we have counts for
4 papers · 1 filter
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
Mathieu Pierre, Benoît Roche, Romain Wacquez +3
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxid…
Compact silicon double and triple dots realized with only two gates
Mathieu Pierre, Romain Wacquez, Benoit Roche +6
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below…
Single donor ionization energies in a nanoscale CMOS channel
M. Pierre, R. Wacquez, X. Jehl +3
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these d…