210 citations · 934 across the 13 of their papers we have counts for
13 papers
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…
Gate-sensing coherent charge oscillations in a silicon field-effect transistor
M. Fernando Gonzalez-Zalba, Sergey N. Shevchenko, Sylvain Barraud +4
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-eff…
Dimensionality effects on the luminescence properties of hBN
éonard Schué, Bruno Berini, Bernard Plaçais +4
Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown fro…
Anisotropic magneto-capacitance in ferromagnetic-plate capacitors
J. A. Haigh, C. Ciccarelli, A. C. Betz +4
The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin…
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
A. C. Betz, R. Wacquez, M. Vinet +5
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate elec…
Ambipolar quantum dots in intrinsic silicon
A. C. Betz, M. F. Gonzalez-Zalba, G. Podd +1
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulatio…