Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

Abstract

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.

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• Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
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• Dispersive Gate Sensing the Quantum Capacitance of a Point Contact