activity
20172026
most citedProbing single electrons across 300 mm spin qubit wafers

142 citations · 477 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2026

20 Second Parity Lifetime in an InAs--Pb Tetron Device

Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +162

A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle…

cond-mat.mes-hall2025

Distinct Lifetimes for and Loop Measurements in a Majorana Tetron Device

Morteza Aghaee, Zulfi Alam, Rikke Andersen +164

We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superco…

quant-ph2025★ 5 cited

Roadmap to fault tolerant quantum computation using topological qubit arrays

David Aasen, Morteza Aghaee, Zulfi Alam +179

We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap e…

quant-ph2023★ 142 cited

Probing single electrons across 300 mm spin qubit wafers

Samuel Neyens, Otto K. Zietz, Thomas F. Watson +27

Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qub…

cond-mat.mes-hall2022★ 1 cited

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

G. A. Oakes, V. N. Ciriano-Tejel, D. Wise +18

Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary…

cond-mat.mes-hall2020★ 13 cited

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty +8

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The a…