Spin qubit manipulation of acceptor bound states in group IV quantum wells
arXiv:1702.00960 · doi:10.1088/1367-2630/aa695f
Abstract
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge content and can be tuned by shifting the hole wave-function between the heterostructure constituent layers. The lack of inversion symmetry induced both by the quantum well and the electric fields together with the g-factor tunability allows the possibility of different qubit manipulation methods such as electron spin resonance, electric dipole spin resonance and g-tensor modulation resonance. Rabi frequencies up to hundreds of MHz can be achieved with heavy-hole qubits, and of the order of GHz with light-hole qubits.
10 pages, 8 figures
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Cited by in corpus (8)
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- Quadrupolar interactions between acceptor pairs in p-doped semiconductors
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- Heitler-London model for acceptor-acceptor interactions in doped semiconductors