A Dressed Spin Qubit in Silicon

Abstract

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2\rho }^{\ast }=2.4$ ms and $T_{2\rho }^{\mathrm{Hahn}}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

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• Robust iSWAP gates for semiconductor spin qubits with local driving
• Extension of the Coherence Time by Generating MW Dressed States in a Single NV Centre in Diamond