153 citations · 231 across the 6 of their papers we have counts for
10 papers
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…
Low dephasing and robust micromagnet designs for silicon spin qubits
N. I. Dumoulin Stuyck, F. A. Mohiyaddin, R. Li +3
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, th…
High mobility SiMOSFETs fabricated in a full 300mm CMOS process
Timothy N. Camenzind, Asser Elsayed, Fahd A. Mohiyaddin +7
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this w…
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…
Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
J. Verjauw, A. Potočnik, M. Mongillo +16
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microw…
Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
Anton Potočnik, Steven Brebels, Jeroen Verjauw +11
Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum…