Large Stark tuning of donor electron spin quantum bits in germanium

Abstract

Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for ${}^{75}$As and ${}^{31}$P donor electrons and compare them to the available theory. Our data reveal that ${}^{31}$P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon.

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Cited by in corpus (3)

• Giant g factor tuning of long-lived electron spins in Ge
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Spin qubit manipulation of acceptor bound states in group IV quantum wells