Conditional control of donor nuclear spins in silicon using Stark shifts

Abstract

Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities.

5 pages, 4 figures, 1 supplementary information

References in corpus (4)

• Solid state quantum memory using the 31P nuclear spin
• Stark Tuning of Donor Electron Spins in Silicon
• Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance
• Davies ENDOR revisited: Enhanced sensitivity and nuclear spin relaxation

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