Anisotropy-driven spin relaxation in germanium

Abstract

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The confluence of electron-phonon scattering (leading to Elliott-Yafet spin flips) and this previously unobserved physics enables the extraction of spin lifetime solely from spin-valve measurements, without spin precession, and in a regime of substantial electric-field-generated carrier heating. We find spin lifetimes in Ge up to several hundreds of ns at low temperature, far beyond any other available experimental results.

to appear in Phys. Rev. Lett

References in corpus (8)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Lateral Spin Injection in Germanium Nanowires
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• The Larmor clock and anomalous spin dephasing in silicon

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• Impurity-assisted tunneling magnetoresistance under weak magnetic field
• Donor-driven spin relaxation in multi-valley semiconductors
• Electron spin coherence of shallow donors in natural and isotopically enriched germanium
• Giant g factor tuning of long-lived electron spins in Ge
• Highly anisotropic spin transport in ultrathin black phosphorus
• Non-local opto-electrical spin injection and detection in germanium at room temperature
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Large Stark tuning of donor electron spin quantum bits in germanium
• Pure spin current transport in a SiGe alloy
• Suppressing spin relaxation in silicon
• Optical orientation of electron spins and valence band spectroscopy in germanium
• Kramers' revenge
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Resonant and Time-Resolved Spin Noise Spectroscopy
• Laser-field detuning assisted optimization of exciton valley dynamics in monolayer WSe${}_2$: Geometric quantum speed limit
• Signature of Hanle Precession in Trilayer MoS2: Theory and Experiment
• Unprecedented Spin-Lifetime of Itinerant Electrons in Natural Graphite Crystals